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Power amplifier 100w vmosfet 1

2015-01-02 00:37  
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Power amp 100W with V-MosFet [1]

Power_amp_100W_Vmosfet_A.gif (14472 bytes)

  ??? ????? ???????? ??? ???????????? ???? ????? ?????????? ??????????? V-MOSFET. ?? ?????????? ???? ??? ?????????? ????? ??????????? ?? ????? ?? ?? ???? ???????? ?????????? , ???? ?????? ?????????, ??????? ?????????, ??????? ????????????? ???. ???? ??? ???? ?? ??????? ???????????? ??? ????? ???????? ?????? ???? ????? fet ??? ???? ???????? [Q3], ?? trimmer TR1 ?? ?? ????? ??????????? ?? ?????????????? ??? ?????????? ????????? ??????? Q1-2. ?????? ?????????? ????? ? ????? ????? ???????? Wilson Q7-8 ??? Q10-11 .?? ?? trimmer TR2 ?????????? ?? ????? ??????? ??? ??????? ?????? ??? 100 ma . ? ????? ??? ?????? D2 ??? D5 ?? ????????? ?? ??? ??????????? R17-19 , ???????????? ??? ????? ??? ?????????? V-FET ??? ?? ?? ????????? ? ???? ?? ? 14V ??? ?? ???????????? ???????? ??? ???? ????? ?????? SiO2 , ??? ??????????????? ??? ?????? ???? ???? . ????? ? ?????? ?????????? ????? ?????? ?? ????? ???? ????????? ??? ????????????? ???? ?? ??????????. ?? ???????? ?????? ??? ????????? ????? 32.6 , ??????????? ??? ??? R18, R6 ??? R8, ???? ????????. ?????? ??????????????? ?????? ? ????? ??????? ????????? ??? ????????????? ??? ??????????? ???? ??? ???? ??? ???????? . ?????? ?? ?????????? V-FET ????? ?????? ?????????? ???????????? , ?? ?????????? ?? ??? ?????? ??? ???????????? ????????? ??? ? ????????? ????. ???? ? ?????? ???? ??? ?????????? ??? ?????? ??? ???????? ??? ???????? ?? ?????????? , ??? ??? ? ????? ???. ? ????? ????????????? ??????????? ??? ?????? ???????? ??? ??????, ??????????? ??????????? ??? ??????? ????????????? ???????????????. ?? ?????? ?????? ????? ??? L. Hood ??? ???????????? ??? ?? Wireless Word.

  One still designing that it uses in the exit transistor of technology V-mosfet. This transistors to us offer a lot of virtues concerning the simple bipolar transistors, as high speeds, thermic stability, low distortion etc. Beyond this circuit use also other useful solutions as use fet as source of current [ Q3 ], trimmer TR1 with which we match the characteristics of differential amplifier of entry Q1-2. Also extensive is the use of sources of current wilson Q7-8 and Q10-11. With trimmer TR2 regulate the bias current of output stage, in the 100 ma. The use of diodes D2 until D5 in combination with the resistances R17-19, they protect the gates of transistors v-fet from exceeds the voltage ? 14V and it creates perforation in very thin layer SiO2, that is used as insulation in the gate. This way of protection is common in all the amplifiers that use these transistors. The total gain of amplifier is 32.6, regulated from the R18, R6 and R8, in the negative feedback. Also is used enough the use of local feedback for stabilisation of operation under all the conditions. Because the transistors v-fet have positive factor of temperature, with result with the increase of temperature is increased also their resistance. This increase has as result the reduction of current that via the transistor, hence also his power. The use of separated supply in the stages of drive and exit, ensures stability and reject of distortion of intermodulation. The initial drawing of is L. Hood and was published by the Wireless Word.

Power supply for 100W amp [1]

Part List

R1=27KohmR24=8.2ohmD1=12V 0.5W Zener
R2-11=4.7KohmR25=10ohm  1WD2.....5=8.2V 1W Zener
R3-4=5.6KohmTR1=470ohmtrimmerL1=20 turns 0.6mm on R25
R5=47KohmTR2=4.7KohmtrimmerQ1-2=BC 547
R6=1KohmC1=1uF 63V mktQ3=2N5460fet
R7-10-21=22KohmC2=1nF 100V*Q4-5=MPSA93
R8=12ohmC3=100uF 16VQ6-8-11=BC182
R9=1MohmC4=100nF 100V*Q7-10=MPSA43
R12=33ohmC5-7=22uF 16VQ9=BC212
R13-20=82ohmC6=4.7pF ceramicQ12=2SK134or2SK135
R14=33ohmC8=47uF 16VQ13=2SJ49or2SJ50
R15=2.7KohmC9=1nF 100V*
R16=270ohmC10-11=100uF 100V*polyester or mylar
R17-19=680ohmC12-14=100nF  250V mkt
R18=33KohmC13=150nF 100V mkt
R22-23=0.33ohm  5WC15=100uF 35V

??? ?????????? ??? ???? ?? ????, ??? ?????? ??? ????? ???? ????????? ??? ????????? ??? ????????????? ??POWERVMOSFET??? ?????? [2SK134or2SK135] [2SJ49or2SJ50], ????? ??? , ?? ??? ????? ?????????? ??? ?????????? ????? ??? ??? Toshiba ??? ????? ?????? ??????? ?? ??????? ?????. ??????? ?? ??????????????? ?? ?? [2SK1530N-FET ???? ???? ???2SK135] ??? [2SJ201P-FET ???? ???? ???2SJ50]. ?? ??? ?????????? ????? ?? ???????? ???? ??-3? ??? ??? TO-3 ,???????? ?? ??????????? ?????? ??????????? ??? ????? ?????? ?????????? ???????????? . ???? ???????? ??? ?? ??? ?????? ??? ????????????, ????????? ??? ?? ????? ??? ????????? ??? ???? ??? ?? ??????????. ?? ??? ?????????? ??? ?? ??? ????????? ????? ??? ?? ?? ????????? ?? ???? ??? ??????? ?? ????????????? ??? ?? ?? ????????????.

A branding that I want to make, that is in effect for all the amplifiers that I publish and use thePOWER VMOS FETof series [2SK134or2SK135] [2SJ49or2SJ50], they are that, more above transistor they are not produced more by the Toshiba and are enough difficult they are found henceforth. They can be replaced with [2SK1530in the place of2SK135] and [2SJ201in the place of2SJ50]. The new transistors are in plastic case ??-3? and no TO-3, bear in bigger supply of operation and have positive factor of temperature. This mean that with the increase of temperature, is increased and the current that is gone through from through the transistor. The new transistors him I have still not tryed and me it would interest to learn if somebody him used also with which results.

      Dataseets for2SK1530      Dataseets for2SJ201

 

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