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MOSFETs Raise Protection Levels for Inductive Loads(ZXMS6006

2016-09-24 03:37  
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This article describes the MOSFETs Raise Protection Levels for Inductive Loads (ZXMS6006DT8). The principle is very simple, very practical. The circuit components can help you understand better grasp this principle. For example, in this circuit, you can go to find and buy these components: ZXMS6006DT8.self protected diodes 

Diodes Incorporated a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic and analog semiconductor markets, today announced further additions to its IntelliFET? range of self-protectedMOSFETs. The 60V, 75mΩ (typical) rated single N-channel ZXMS6006DG/SG and dual N-channel ZXMS6006DT8 provide thermal shutdown, short circuit, over voltage, over current and inputESDprotection facilities enabling circuit designers to dramatically increase circuit reliability. Well suited for automotive and industrial applications, these self protectedMOSFETs are ideal for switching inductive loads, such as motors, relays and lamps at low frequencies.

The dual channel ZXMS6006DT8 integrates over-temperature, over-current, over-voltage and inputESDprotection on each of their two independent and isolated switching channels. Packaged in the thermally efficient SM8, the ZXMS6006DT8 delivers a thermal efficiency 30% better than comparable competing SO8 devices, ensuring cooler running, more reliable end applications.

The single channel ZXMS6006DG (drain connected to tab) and ZXMS6006SG (drain connected to source) are offered in the compact high power dissipation SOT223 package and provide a cost effective alternative to competing solutions. Both the ZXMS6006DG and ZXMS6006SG have nominal load current ratings of 2.8A, at an input voltage of 5V, and have an avalanche clamping rating of 490mJ.


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